PARTICULARITES DES CARACTERISTIQUES CAPACITE-TENSION DE DETECTEURS P-I-N AU SI(LI)DEMIDOVA GN.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 66-72; BIBL. 7 REF.Serial Issue

CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL/AL₂O₃/P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODESHAYASHI H; KIKUCHI K; YAMAGUCHI T et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 404-406; BIBL. 23 REF.Article

ETUDE DES PHENOMENES D'HYSTERESIS DANS LES STRUCTURES AL-SIO₂-GEVOLKOV SA; GOROKHOV EB; NEIZVESTNYJ IG et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 3; PP. 248-253; BIBL. 6 REF.Article

DISPOSITIF MEMORISANT MNOS A CONTROLE DE LA CARACTERISTIQUE CAPACITE-TENSIONGIL'MAN BI; KASATKIN VV; SOROKIN YU V et al.1976; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1976; VOL. 21; NO 3; PP. 656-658; BIBL. 8 REF.Article

ANALYSE DES CARACTERISTIQUES C-V DE STRUCTURES MOS SUR DU SILICIUM DE RESISTIVITE ELEVEBETKO J; DUBECKY F; MERINSKY K et al.1975; ELEKTROTECH. CAS.; CESKOSL.; DA. 1975; VOL. 26; NO 5; PP. 365-376; ABS. RUSSE ALLEM. ANGL.; BIBL. 5 REF.Article

CALCULATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON SCHOTTKY DIODESCHEN I; LEE S.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 487-489; BIBL. 13 REF.Article

CAPACITANCE-VS-VOLTAGE CHARACTERISTICS OF ZNO VARISTORSMUKAE K; TSUDA K; NAGASAWA I et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4475-4476; BIBL. 14 REF.Article

USE OF DRAIN CAPACITANCE-VOLTAGE CHARACTERISTICS AS A PROCESS CONTROL TOOL FOR THE THRESHOLD VOLTAGE OF SILICON GATE MOSFET'S. = UTILISATION DE LA CARACTERISTIQUE TENSION-CAPACITE DE DRAIN COMME MOYEN DE COMMANDE DU PROCEDE POUR LA TENSION DE SEUIL DES MOSFET AVEC UNE GRILLE AU SILICIUMAGATSUMA T; MORITA J.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 961-962; BIBL. 2 REF.Article

AN AUTOMATIC C-V PLOTTER.FORWARD KE; HASEGAWA H; HARTNAGEL HL et al.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 6; PP. 487-489; BIBL. 9 REF.Article

JUNCTION CAPACITANCE TECHNIQUES TO CHARACTERIZE RADIATION DAMAGE IN SILICONDIEBOLD JW; DEANGELIS HM; KIMERLING LC et al.1973; AIR FORCE CAMBRIDGE RES. LAB., PHYS. SER. RES. PAPERS; U.S.A.; DA. 1973; NO 542; PP. (38 P.); BIBL. 13 REF.Serial Issue

MOS SURFACE POTENTIAL AND THE GROSS NONUNIFORMITYLOPEZ AD; STRAIN RJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 507-511; BIBL. 3 REF.Serial Issue

PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILESBUEHLER MG.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1171-1178; BIBL. 21 REF.Serial Issue

POSSIBILITE D'ACTIVATION DE PARTICULES MOBILES A LA SURFACE EXTERIEURE DU DIELECTRIQUE D'UN SYSTEME DIELECTRIQUE-SEMICONDUCTEURFEDOROVICH YU V; DUMISH LK.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2321-2324; BIBL. 9 REF.Serial Issue

EFFET DES ETATS LIMITROPHES SUR LES CARACTERISTIQUES ELECTROSTATIQUES DES STRUCTURES METAL-SEMICONDUCTEUR 1-DIELECTRIQUE-SEMICONDUCTEUR 2SYSOEV BI; BEZRYADIN NN; SYNOROV VF et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 355-361; BIBL. 8 REF.Article

DETERMINATION OF BORON IN NATURAL SEMICONDUCTING DIAMOND BY PROMPT PARTICLE NUCLEAR MICROANALYSIS AND SCHOTTKY BARRIER DIFFERENTIAL-CAPACITANCE MEASUREMENTS.LIGHTOWLERS EC; COLLINS AT.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 6; PP. 951-963; BIBL. 18 REF.Article

TECHNIQUE FOR PLOTTING NONEQUILIBRIUM C/V CURVES OF AN M.O.S. CAPACITOR.OLENSKI J; MACHALICA P.1975; ELECTRON LETTERS; G.B.; DA. 1975; VOL. 11; NO 11; PP. 232-234; BIBL. 6 REF.Article

CARACTERISTIQUE CAPACITE-TENSION D'UNE CERAMIQUE COMPOSITE BATIO₃-BI₂O₃ DOPEE AU LA AVEC UNE COUCHE BARRIERE DE SURFACEKUWABARA M; YANAGIDA H.1973; J. CERAM. SOC. JAP.; JAP.; DA. 1973; VOL. 81; NO 8; PP. 334-339; ABS. ANGL.; BIBL. 15 REF.Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

VARICAP WITH STEPLIKE C-V CHARACTERISTICSPEYKOV PH.1978; C.R. ACAD. BULG. SCI.; BGR; DA. 1978; VOL. 31; NO 8; PP. 961-962; BIBL. 1 REF.Article

INVESTIGATION OF THE MOST CHANNEL CONDUCTANCE IN WEAK INVERSIONKOOMEN J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 801-810; BIBL. 28 REF.Serial Issue

NEGATIVE KRUEMMUNG DER KAPAZITAETS-SPANNUNGS-KENNLINIE BEI HYPERABRUPTEN UBERGAENGEN = COURBURE NEGATIVE DE LA CARACTERISTIQUE CAPACITE-TENSION DANS LE CAS DE JONCTIONS PN HYPERABRUPTES1972; FREQUENZ; DTSCH.; DA. 1972; VOL. 26; NO 8; PP. 224-226; ABS. ANGL.; BIBL. 1 REF.Serial Issue

COMMENT ON "I-V AND C-V CHARACTERISTICS OF CR!!H-PC!!CR ORGANIC SANDWICH CELL"POPOVIC ZD; ISETT LC.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4871-4873; BIBL. 6 REF.Article

C/V CURVES FOR GATE-CONTROLLED DIODES IN SILICON ON SAPPHIRE.KRANZER D; GASSAWAY JD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 2; PP. 50-52; BIBL. 12 REF.Article

MESURE DES CARACTERISTIQUES CAPACITE-TENSION DE STRUCTURES MIS POLARISEES AVEC UNE TENSION TRIANGULAIREMACHALICA P.1974; PRACE PRZEMYSL. INST. ELEKTRON.; POLSKA; DA. 1974; VOL. 15; NO 1; PP. 31-45; ABS. ANGL. RUSSE; BIBL. 11 REF.Article

PLASMA ANODISATION OF GA_1-XIN_XAS (X=0.35 AND 0.10) AND STUDY OF MOS INTERFACE PROPERTIESGOURRIER S; CHANE JP.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 156-157; BIBL. 6 REF.Article